2N5639RLRAG
ON Semiconductor
半导体JFET（结点场效应
jfet n-ch 35v 310mw to92
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| Standard Package | 1,000 |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | JFETs (Junction Field Effect) |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 20V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - |
| Input Capacitance (Ciss) @ Vds | 10pF @ 12V (VGS) |
| Resistance - RDS(On) | 60 Ohm |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Power - Max | 310mW |
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