ATF-331M4-TR1
Avago Technologies
半导体分离式半导体
transistors RF jfet transistor gaas low noise
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| Manufacturer | Avago Technologies |
|---|---|
| Product Category | Transistors RF JFET |
| RoHS | Yes |
| Brand | Avago Technologies |
| Type | GaAs pHEMT |
| Transistor Polarity | N-Channel |
| Forward Transconductance - Min | 440 mmho |
| Vds - Drain-Source Breakdown Voltage | 5.5 V |
| Vgs - Gate-Source Breakdown Voltage | - 5 V |
| Maximum Drain Gate Voltage | - 5 V |
| Id - Continuous Drain Current | 305 mA |
| Frequency | 2 GHz |
| Gain | 15 dB |
| Pd - Power Dissipation | 400 mW |
| Maximum Operating Temperature | + 160 C |
| Mounting Style | SMD/SMT |
| Package / Case | Mini PAK |
| Packaging | Reel |
| Configuration | Single Dual Source |
| Minimum Operating Temperature | - 65 C |
| Noise Figure | 0.6 dB |
| P1dB | 19 dBm |
| Product | RF JFET |
| Factory Pack Quantity | 3000 |
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