ATP112-TL-H
ON Semiconductor
半导体分离式半导体
mosfet switching device
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| Manufacturer | ON Semiconductor |
|---|---|
| Product Category | MOSFET |
| RoHS | Yes |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 60 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | - 75 A |
| Rds On - Drain-Source Resistance | 43 mOhms |
| Configuration | Single |
| Qg - Gate Charge | 33.5 nC |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 40 W |
| Mounting Style | SMD/SMT |
| Package / Case | ATPAK-2 |
| Packaging | Reel |
| Brand | ON Semiconductor |
| Fall Time | 120 ns |
| Forward Transconductance - Min | 24 S |
| Minimum Operating Temperature | - 55 C |
| Rise Time | 80 ns |
| Series | ATP112 |
| Factory Pack Quantity | 3000 |
| Typical Turn-Off Delay Time | 150 ns |
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